To develop 2-D to 2-D tunneling structures to enable for smaller, faster, more capable microelectronic devices applied to a broad range of applications such as energy, RF, and sensing.
Issues Involved or Addressed
GT has a unique opportunity to apply significant experience and capability in Molecular Beam Epitaxy within GTRI (Wagner) to the synthesis of novel 2-D materials being studied within the Vogel group. This vertically integrated project (VIP) will synthesize large area 2-D materials (e.g., MoS2 and WS2) and device structures using thin film deposition and microfabrication techniques. The impact of synthesis conditions (e.g., plasma assist, source materials, and temperatures) on crystal structure will be studied using techniques such as SEM, XRD, XPS, and Raman. These materials structures will then be fabricated into 2D-to-2D tunnel junctions and TFETs using microfabrication processes (e.g. photolithography, interlayer dielectrics, metallization, etc.). Once fabricated, detailed electrical characterization of these devices will be carried out, utilizing conventional (current-voltage, capacitance voltage, etc.) and specialized (e.g. inelastic tunneling spectroscopy) techniques.
Methods and Technologies
Academic Majors of Interest
Preferred Interests and Preparation
MSE, ECE, ME – Background/interest in materials and device design, synthesis and characterization. Cleanroom and microscopy skills helpful but not required.
Meeting Schedule & Location
- Georgia Tech Research Institute